Highly sensitive hydrazine chemical sensor based on ZnO nanorods field-effect transistor.
نویسندگان
چکیده
A highly sensitive hydrazine chemical sensor has been fabricated based on a field-effect transistor (FET) by growing vertically-aligned ZnO nanorods directly on silver electrodes. The FET sensor showed a high sensitivity and a low limit of detection (LOD) of 59.175 μA cm(-2)μM(-1) and ~3.86 nM, respectively. This demonstrates a cost effective and low power consuming FET strategy for the detection of hydrazine.
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ورودعنوان ژورنال:
- Chemical communications
دوره 50 15 شماره
صفحات -
تاریخ انتشار 2014